US – Page 255 – TechConnect Briefs

An Improved Impact Ionization Model for SOI Circuit Simulation

Xi X., Li F., Liu W., Tudor B., Wang P., Wang W., Liu W., Lee F., Wang P., Wang W., Subba N., Goo J-S, Synopsys, Inc., US

The impact ionization (II) model accuracy issue in industry standard SOI MOSFET is discussed in the paper. Based on Medici 2D simulation study, an improved impact ionization model is proposed which can capture the voltage [...]

Effective Drive Current in CMOS Inverters for Sub-45nm Technologies

Hu J., Park J-E, Freeman G., Wong H.S.P., Stanford University, US

We propose a new model for the effective drive current (Ieff) of CMOS inverters, where the maximum FET current obtained during inverter switching (Ipeak) is a key parameter. Ieff is commonly defined as the average [...]

Model Implementation for Accurate Variation Estimation of Analog Parameters in Advanced SOI Technologies

Suryagandh S., Subba N., Wason V., Chiney P., Wu Z-Y, Chen B.Q., Krishnan S., Rathor M., Icel A., Advanced Micro Devices, US

Analog design uses transistors with longer channel length for high performance. gm, Rout and intrinsic gain form the matrix to gauge this performance. It is critical to design these circuits for manufacturing variability. This work [...]

Modeling of Spatial Correlations in Process, Device, and Circuit Variations

Lu N., IBM, US

We present an innovative method to model the spatial correlations in semiconductor process and device variations or in VLSI circuit variations. Without using the commonly adopted PCA approach, we give a very compact expression to [...]

An Accurate and Versatile ED- and LD-MOS Model for High-Voltage CMOS IC Spice Simulation

Tudor B., Wang J.W., Hu B.P., Liu W., Lee F., Synopsys, Inc., US

The paper presents a high-voltage compact MOSFET model that has been proven physically accurate and numerically robust for various and generations of high-voltage ED (extended drain) and LD (laterally double diffused) production CMOS process technologies. [...]

The Bipolar Field-Effect Transistor Theory (B. Latest Advances)

Sah C-T, Jie B.B., University of Florida, US

Latest advances are presented on theoretical device and circuit characterizations of the Bipolar Field effect transistor (BiFET) [1]. The 2 Dimensional (2 D) rectangular geometry of the transistor (uniform in the width direction) is employed [...]

Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation

Zhou Y., Hajjar J.-J., Analog Devices, Inc., US

A new enhancement on modeling ‘snapback’ in MOS transistors for ESD simulation is presented. The model uses standard industry models only and intrinsically includes all major physical effects in snapback. An ESD snapback MOS model [...]

Recent Advancements on ADMS Development

Gu B., Lemaitre L., Freescale Semiconductor, US

Last a few years have witnessed a quick rise of Verilog-A language as a new standard for compact model development. Consequently there are significant interests in developing softwares which compiles compact models defined in Verilog-A [...]

The Driftless Electromigration Theory (Diffusion-Generation-Recombination-Trapping)

Sah C-T, Jie B.B., University of Florida, US

Electromigration (EM) is the transport of atoms and ions in metals at high electrical current density (>100kA/cm^2) leaving behind voids. It was delineated in 1961 by Huntington [1] in gold wire, and empirically modeled by [...]

Multiscale Approach to Nanocapsule Design

Shreif Z., Ortoleva P., Indiana University, US

A methodology for the computer-aided design of nanocapsules for the targeted delivery of therapeutic agents is presented. Previous models are macroscopic and, therefore, do not take into consideration atomistic effects and, furthermore, require recalibration with [...]