UK – Page 34 – TechConnect Briefs

Sample-Shunting Based PCR Microfluidic Device

Auroux P-A, Day P.J.R., Manz A., Imperial College, UK

A new method to perform on-chip DNA amplification is presented in this abstract: we shunt the sample back and forth over temperature-controlled zones. Compared to existing systems, this approach offers, in addition to a greater [...]

High-Resolution Electrochemical In Situ Printing

Egeland R.D., Southern E.M., Oxamer & Oxford Gene Technology, UK

This work demonstrates a new method for making oligonucleotide microarrays by synthesis in situ. The method uses conventional DNA synthesis chemistry with an electrochemical deblocking step. Acid is delivered to specific regions on a glass [...]

Computational Modelling and Structural Studies of Perfluoro Sulfonate Ionomer Membranes

Elliott J.A., University of Cambridge, UK

Perfluoro sulfonate ionomer membranes (PIMs) consist of a Teflon (PTFE) backbone with sulfonic acid groups periodically substituted along the chain, and are of great commercial interest due to their peculiar ion transport properties. In particular, [...]

Brownian Dynamics Based Particle Mesh Simulation of Ionic Soulutions and Channels

Millar C., Asenov A., Roy S., Glasgow University, UK

We present a methods based around the Self Constistent solution of the coupled Langevin/Poisson equations for the simulation of ionic solutions.

Dynamic Simulation of MEMS Switches using Simulink

Combes D.J., Brunson K.M., John R., Bunyan T., QinetiQ Ltd, UK

A nodal model is implemented in Simulink and used to investigate the dynamics of electrostatically actuated MEMS switches. The model is based on reduced order 4DOF beam elements, with electrostatic forces based on simple parallel [...]

A Physical Compact MOSFET Mobility Model Including Accurate Calculation of Saturation Surface Potential

Benson J., D’Halleweyn N.V., Mistry K., Redman-White W., University of Southampton, UK

This paper describes a MOSFET vertical mobility model that has been implemented in a surface potential based compact model [1]. The main scattering mechanisms (surface roughness, phonon, and Coulomb) are accounted for using an expression [...]

Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

Watling J.R., Asenov A., Brown A.R., Svizhenko A., Anantram M.P., University of Glasgow, UK

We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain [...]

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Kunz V.D., de Groot C.H., Anteney I.M., Abdul-Rahim A.I., Hall S., Hemment P.L.F., Wang Y., Ashburn P., University of Southampton, UK

In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates [...]

Frequency Tuning of Silicon Micromechanical Cantilevers by Laser Ablation

Gallacher B.J., Hedley J., Burdess J.S., Harris A.J., Newcastle University, UK

The high Q-factor and stability of micromechanical resonators makes them attractive for a range of applications such as R.F. filters [1] and resonant sensors [2]. In many cases, a specific resonant frequency is necessary for [...]

Development of a Resonant Magnetometer

Izham Z., Ward M.C.L., Brunson K.M., Stevens P.C., Microsystems Mechanical Engineering, UK

A new design and analysis of a resonant magnetometer is presented. Preliminary analysis shows a sensitivity of 3.9mV/microT. BESOI manufacturing techniques promises easy incorporation to present gyroscope and accelerometer designs promising a complete navigational control [...]