SG – TechConnect Briefs

Hybrid Process Design Kit: Single-Chip Monolithic III-V/Si Cascode GaN-HEMT

Chiah S.B., Zhou X., Lee K.E.K., Antoniadis D., Nanyang Technological University, SG

In this paper, we present the design of a cascode GaN-HEMT (CGH) structure in the monolithic integration of III-V/Si fabrication platform to fabricate monolithic III-V/Si CGH structures on a single chip by using hybrid process [...]

Bilayer coated ureteral stent as drug delivery platform to treat ureteric diseases

Lim W., Xiong G.M., Chong T.W., Huang Y., Venkatraman S., Nanyang Technological University, SG

The current methods of treating ureteric diseases such as strictures and carcinoma include endoscopic full-thickness incision of the ureteric wall and placement of an indwelling stent for up to 6 weeks. However, such interventions are [...]

A Hybrid Process Design Kit: Towards Integrating CMOS and III-V Devices

Chiah S.B., Zhou X., Lee K.E.K., Ng C.Y., Antoniadis D., Fitzgerald E.A., Nanyang Technological University, SG

A hybrid process design kit (PDK) for novel integrated circuits incorporating high performance compound semiconductor materials and devices into existing production Si-CMOS compatible foundry process is presented. The hybrid PDK permits direct integration of Au-free [...]

Stretchable electronic devices using novel material and structural approaches

Wang J., Lee P.S., Nanyang Technological University, SG

Stretchable electronics are a new type of mechanical deformable devices which are gaining increasing interests and believed to be one of the essential technologies for the next generation electronic applications. The excellent mechanical conformability in [...]

Low-cost spin-coatable, Transferable, and High-k Ion Gel Dielectric for Flexible Eletrowetting

Narasimhan V., Sanjairaj V., Park S.Y., National University of Singapore, SG

Electrowetting-on-dielectric (EWOD) is an emerging liquid-handling technology, enabling the wettability modulation of a liquid on a solid surface with an applied electric field. Recently, EWOD has been attractively used on flexible substrates to show potential [...]

Low-cost spin-coatable, Transferable, and High-k Ion Gel Dielectric for Flexible Eletrowetting

Narasimhan V., Sanjairaj V., Park S.Y., National University of Singapore, SG

Electrowetting-on-dielectric (EWOD) is an emerging liquid-handling technology, enabling the wettability modulation of a liquid on a solid surface with an applied electric field. Recently, EWOD has been attractively used on flexible substrates to show potential [...]

Unexpected interactions of nanoparticles with endothelial and epithelial cells

Leong D.T., National University of Singapore, SG

Nanoparticles regardless as subjects of nanotoxicity or nanomedicine studies will inevitably interact with endothelial and epithelial cells. In the case of nanomedicine, while these cells are usually not the intended target, nanoparticles first interact with [...]

A hierarchical carbon nanofiber-In2S3 photocatalyst with well controlled nanostructures for highly efficient hydrogen production under visible light

Gao P., Li A., Liu Z., Tai M., Liu Z., Sun D.D., Nanyang Technological University, SG

Hydrogen as a renewable clean energy has attracted a lot attention because of its high heat conversion efficiency and zero carbon emission, while synthesizing highly efficient material for photocatalytic hydrogen production under solar light remains [...]

A hierarchical carbon nanofiber-In2S3 photocatalyst with well controlled nanostructures for highly efficient hydrogen production under visible light

Gao P., Li A., Liu Z., Tai M., Liu Z., Sun D.D., Nanyang Technological University, SG

Hydrogen as a renewable clean energy has attracted a lot attention because of its high heat conversion efficiency and zero carbon emission, while synthesizing highly efficient material for photocatalytic hydrogen production under solar light remains [...]

Compact Model Characteristics for Generic MIS-HEMTs

Zhou H.T., Zhou X., Chiah S.B., Syamal B., Zhou H.T., Zhou X., Ajaykumar A., Liu X., Nanyang Technological University, SG

III-V channel field-effect transistors (FETs), such as metal–insulator–semiconductor high electron-mobility transistors (MIS-HEMTs), have emerged as promising candidates for future generation high-frequency, high-voltage, and high-power applications. Development of a compact model for generic HEMTs in III-V/Si [...]