NE – TechConnect Briefs

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Scholten A.J., Tiemeijer L.F., van Langevelde R., Zegers-van Duijnhoven A.T.A., Havens R.J., Zegers-van Duijnhoven A.T.A., Venezia V.C., Klaassen D., Philips Research Laboratories Eindhoven, NE

The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the [...]

Compact Modelling of High-Voltage LDMOS Devices

Aarts A.C.T., van der Hout R., van Langevelde R., van der Hout R., van Langevelde R., Scholten A.J., Willemsen M.B., Klaassen D.B.M., Philips Research Laboratories, NE

In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances [...]

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Scholten A.J., Tiemeijer L.F., van Langevelde R., Zegers-van Duijnhoven A.T.A., Havens R.J., Zegers-van Duijnhoven A.T.A., Venezia V.C., Klaassen D., Philips Research Laboratories Eindhoven, NE

The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the [...]