KR – Page 53 – TechConnect Briefs

Properties of Self-Assembled Monolayer as an Anti-adhesion Layer on Metallic Nano Stamper

Choi S., Lee N., Kim Y.J., Kang S., Yonsei University, KR

The increasing demand for micro/nano optical components in the fields of optical data storage, optical communication, and digital display has required mass replication of polymeric micro/nano patterns. In nano replication process, surface quality can be [...]

Synthesis of Carbon Nanotubes by Decomposition of Hydrocarbon Using an Arc-Jet Plasma

Choi S., Choi S.S., Nam J.S., Choi S., Choi S.S., Lee C.M., Kim J.I., Hong S.H., Seoul Nationl University, KR

We present a method to produce carbon nanotubes by decomposition of hydrocarbons using an arc-jet plasma of high temperature (500020000 K). Carbon nanotubes are continuously produced in a floating condition by introducing a hydrocarbon gas [...]

Nano Gripper using Carbon Nanotube

Lee J.S., Kwon S-K, Choi J-S, Kang G-S, Kwak Y-K, Kim S-H, KAIST, KR

In this paper, we proposed a nano gripper that was made from two nano probes. And, those nano probes were made from the tungsten tip and multi-wall carbon nanotube with acrylic adhesive under optical microscope. [...]

Development of the Nano Aligner for CNT-tip fabrication

Kang G-S, Lee J.S., Choi J-S, Kwak Y-K, Kim S-H, KAIST, KR

AFM tip has been used for surface profiling with a fine resolution, but there is a barrier to improve its performance because of the low aspect ratio. Many researchers have solved this problem with attaching [...]

Kinetic Monte Carlo Modeling of Boron Diffusion in Si Crystalline Materials

Seo J., Hwang C-O, Kwon O., Kim K., Won T., School of Engineering, Inha University, KR

In this paper, we report a lattice-free kinetic Monte Carlo (KMC) result of boron diffusion at low temperatures 450o and 550o with vacancy + interstitialcy mechanism or vacancy + kick-out one with dilute self-interstitials (I) [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Kwon O., Seo J., Won T., Inha University, KR

A two-dimensional quantum mechanical modeling has been performed to simulate a nano-scale FinFET by obtaining the self-consistent solution of coupled Poisson and Schrödinger equations. Calculated current-voltage (I-V) curves are carefully compared with experimental data to [...]

Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics [...]

Thin Film Instability and Nanostructure Formation: a Molecular Dynamics Study

Han M., Lee J.S., Park S., Choi Y.K., Seoul National University, KR

One of the recent studies showed that the structures can be self-constructed by controlling the instability of thin fluid film of a nano-scale [S.Y. Chou and L. Zhuang, , J. Vac. Sci. and Technol. B, [...]

Corner Charge Singularity of Conductors

Hwang C-O, Given J.A., Inha University, KR

In this paper, we investigate a diffusion-based simulation method for the corner singularity of a conducting object, rapidly evaluating the power-law singularity associated with the corner of the conducting object for the computation of capacitance [...]

Atomistic Process and Simulation in the Regime of sub-50nm Gate Length

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report an atomistic simulation approach for sub-50nm gate length FETs. The proposed atomistic approach consists of the coupling the molecular dynamics (MD) simulations of the collision cascades for ion implantation process [...]