KR – Page 49 – TechConnect Briefs

Sub-100nm and Large Area Pattern Process using by Hybrid Nanocontact Printing (HnCP)

Jo J., Kim K-Y, Choi D.S., Lee E-S, Korea Institute of Machinery & Materials(KIMM), KR

The hybrid nanocontact printing(HnCP) method is a technology for manufacturing an ultra violet(UV) imprinted silicon substrate from a master and then printing by letting it get in contact with a substrate coated with a metal [...]

Low Temperature Volatile-Organic-Compound (VOC) Sensor Based on Tungsten Oxide Nanorods

Kim Y-S, Kim Y.T., Kim Y-S, Kim Y.T., Lee K., Electronics and Telecommunications Research Institute (ETRI), KR

Tungsten oxide sensors were fabricated by using highly crystalline and homogeneous WO2.72 nanorods, previously synthesized and characterized with average 75-nm length and 4-nm diameter [1]. They provide unique opportunities for investigating the effects of size-controlled [...]

KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects

Yoo J-H, Hwang C-O, Seo J., Kwon O., Won T., Inha University, KR

In this paper, we discuss a model for investigating the KMC parameters for interstitial and vacancy and we propose a novel atomistic model to explain the evolution of interstitial clusters during boron diffusion for kinetic [...]

RLC Reduction Scheme for Modeling Interconnection Line Delay in nano-CMOS Circuits

Jung C., Yoon S., Won T., Inha University, KR

In this paper we propose a realizable RLC-in-RLC-out technique to reduce parasitic parameters. The proposed technique is an efficient MOR (Model Order Reduction) method, which makes it possible to control the rise and delay time [...]

Topography Simulation for Structural Analysis Using Cell Advancing Method

Lee J-G, Yoon S., Kwon O., Won T., Inha University, KR

We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Park I-S, Won T., Inha University, KR

We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called “center-channel (CC) double-gate (DG) MOSFET, ”. The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based [...]

Growth of 3C-SiC Nanowires on Nickel Coated Si(100) Substrate using Dichloromethylvinylsilane and Diethylmethylsilane by MOCVD Method

Kang B.-C., Hyun J.S., Boo J.-H., Sungkyunkwan University, KR

3C-SiC nanowires have been deposited on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH2CHSiC(CH3)Cl2) and diethylmethylsilane (CH3 SiH(C2H5)2) were used as a single precursor without [...]

First-Principles Studies of SnS2 Nanotubes

Chang H., In E., Kong K-J, Lee J-O, Choi Y., Ryu B-H, Korea Research Institute of Chemical Technology, KR

First principles calculations are used to predict the stability and electronic structures of SnS2 nanotubes. Optimization of several structures and their corresponding strain energies confirms the stability of SnS2 nanotube structures. Band structure calculations show [...]

Fabrication of Metal Oxide Coaxial Nanotubes using Atomic Layer Deposition

Jeong D-K, Oh T-K, Shin H-J, Jung W.-G., Lee J-G, Sung M-M, Kim J-Y, Kookmin University, KR

We fabricated of nanotubular structures of TiO2 and ZrO2 using the gas-phase fabrication method atomic layer deposition (ALD) with nanoporous structure of polycarbonate (PC) templates. Contact printed alkylsiloxane monolayers on both sides of PCs were [...]

Microchannel Reactor Stacked by Brazing Method

Yu S.P., Lee S.J., Lee W.Y., Kim C.S., Lee S.J., Lee W.Y., Song K.S., Korea Institute of Energy Research, KR

Each stack of microstructured stainless steel and aluminum plates was coated and brazed in vacuum. As a supporter of catalyst, the coating layer was formed by sol-gel method and anodizing respectively. Though the number of [...]