JP – Page 30 – TechConnect Briefs

Searching for a New Type of Surface Percolation on a 3D lattice

Tanizawa T., Takano H., Miyazima S., Kochi National College of Technology, JP

We consider a new surface percolation problem on a 3D simple cubic lattice through numerical simulation. In this problem, randomly occupied surfaces initially form an inﬁnite cluster at p = 0.21, where p is the [...]

Ab Initio Simulation on Ideal Shear Strength of Silicon

Umeno Y., Kitamura T., Kyoto University, JP

Single crystal of silicon is commonly used for the substrate of electronic devices. Large stress is induced in the substrate due to thermal mismatch of device component. It is well known that a defect such [...]

Ab Initio Molecular Dynamics Simulation on Structure and Strength of Si/Al Interface

Umeno Y., Kitamura T., Kyoto University, JP

It is of great importance to clarify the atomic structure and strength of interfaces between metal and Si substrate in an electronic device. While interaction between atoms near the interface is complicated, ab initio molecular [...]

Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation – Application to via Filling

Hiwatari Y., Kaneko Y., Ohara K., Murakami T., Kanazawa University, JP

In this paper, we study the void formation during via ﬁlling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the [...]

Mechanical and Electronic Properties of Strained Layer Superlattices Studied by Density Functional TB and Path Probability Methods

Masuda-Jindo K., Kikuchi R., Tokyo Institute of Technology, JP

The atomic and electronic structures of semiconductor heterostructures including steps, misfit dislocations and interface disorder are studied by using the density-functional tight-binding (TB) method. Atomic structures of misfit dislocations both edge type 1/2 (001) and [...]

Computer Simulation Study of Mechanical Properties of Nanoscale Materials by Molecular Dynamics and Lattice Green’s Function Methods

Masuda-Jindo K., Menon M., Hung V-V, Tokyo Institute of Technology, JP

The mechanical properties of nanoscale materials are studied using the molecular dynamics and lattice Green’s function methods. The initial atomic structures of the dislocations and cracks are determined both from the elastic solutions as well [...]

HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies

Miura-Mattausch M., Ueno H., Mattausch J.H., Miura-Mattausch M., Kumashiro S., Yamaguchi T., Yamashita K., Nakayama N., Hiroshima University, JP

Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, [...]

Study of Electron Transport in SOI MOSFETs using Monte Carlo Technique with Full-Band Modeling

Takeda H., Mori N., Hamaguchi C., Osaka University, JP

In SOI MOSFETs, electrons are quantized into two-dimensional electron gas by the strong electric field normal to the interface. When the Si-layer thickness is thinner than the inversion layer width, the confinement becomes stronger and [...]

Two-Dimensional Simulation of Surface-State Effects on Breakdown Characteristics of Narrowly-Recessed-Gate GaAs MESFETs

Mitani Y., Wakabayashi A., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It [...]

Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation – Application to via Filling

Hiwatari Y., Kaneko Y., Ohara K., Murakami T., Kanazawa University, JP

In this paper, we study the void formation during via ﬁlling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the [...]