IN – Page 4 – TechConnect Briefs

Impact of Gate Oxide Thickness and Channel Thickness on DC Performance of Carbon Nanotube Tunnel FET

Bhosale K.S., Jawake A.V., Aher S.R., Borse H.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN

The scaling down of conventional complementary metal–oxide–semiconductor technology is suffering from fundamental limitations. To overcome these problems, novel engineering solutions like improving the device architecture,introducing materials into the channel region with superior transport properties, and [...]

Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications

Kumar A., Gupta N., Chaujar R., Delhi Technological University, IN

In this paper, small signal behavior have been investigated for Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Y-parameters and Z-parameters, the results are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency [...]

TCAD Analysis of Small Signal Parameters and RF Performance of Heterogeneous Gate Dielectric-Gate All Around Tunnel FET

Madan J., Gupta R.S., Chaujar R., Delhi Technological University, IN

In this paper the small signal parameters of n-type heterogeneous gate dielectric gate all around tunnel FET (n-type-HD-GAA-TFET) and n-GAA-TFET are analyzed in terms of parasitic capacitance and RF figure of merits (FOM)such as cut [...]

TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]

TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]

A simple process for selective bio-functionalization of SU-8 surface for Lab-on-a-Chip applications

Srinivasan B., Chaurasia D., Vanjari S., Singh S., Indian Institute of Technology - Hyderabad, IN

SU-8 is a popular epoxy based negative photoresist developed by IBM. It has been widely used as structural material in Bio-MEMS and Lab-on-a-Chip devices due to its bio-compatible properties. SU-8 surface has hydrophobic nature. Often [...]

SU-8 Based Flexure-FET Biosensor to Achieve Ultrasensitive Response

Chaurasiya D., Srinivasan B., Vanjari S., Singh S.G., Indian Institute of Technology, IN

This work presents SU-8 based Flexure-FET biosensor to achieve ultrasensitive response. Here, gate of FET is replaced with the fixed-fixed beam. Beam is biased near to pull-in instability (Vpi) and FET channel is biased in [...]

TCAD Analysis of Silicon-Germanium (SiGe) Based Back-Contact Back-Junction (BC-BJ) Solar Cell-an Alternative for Silicon Based Cells

Pandey R., Chaujar R., Delhi Technological University, IN

In this work, an ultra-thin, Back-Contact Back-Junction (BC-BJ) Crystalline Silicon-Germanium (SiGe) solar cell device structure called BC-BJ c-SiGe solar cell has been proposed. The results, are compared with conventional BC-BJ silicon cell. SiGe is used [...]

Photoluminescence Studies of Green Synthesized Copper Nanoparticles

Annapurna S., Suresh Y., Sreedhar B., Singh A.K., Bhikshamaiah G., Osmania University College for Women, IN

Copper nanoparticles are prepared using a two stage chemical reduction method. Potato starch and Ocimum Sanctum leaf extract are used to stabilize the copper nanoparticles. This approach is proved to be an efficient method for [...]

Manganese Doped Zinc Oxide Nanoparticles (MnxZn1-xO): Synthesis, Magnetic Properties and Applications: Photocatalytic and Chemical Sensing

Chauhan M.S., Chauhan S., Chauhan M.S., Chauhan S., Kumar R., Himachal Pradesh University, Shimla, IN

Manganese doped zinc oxide nanoparticles (NPs), MnxZn1-xO; x = 0.01, 0.02, 0.05, 0.1 and 0.2 have been fabricated by the simple solution process. Well-defined morphologies and well-crystallinity of these nanoparticles have been verified with the [...]