FR – Page 27 – TechConnect Briefs

Piecewise Perturbation Method (PPM) Simulation of Electrostatically Actuated Beam with Uncertain Stiffness

Juillard J., Baili H., Colinet E., SUPELEC, Department of Measurement, FR

We present a new approach to the simulation of uncertainties in micro-electromechanical systems, based on the same principle as perturbation methods. This approach is valid for large variations of the uncertainties and requires much less [...]

Finite Element Validation of an Inverse Approach to the Design of an Electrostatic Actuator

Juillard J., Cristescu M., Guessab S., SUPELEC, Department of Measurement, FR

We present an approach to the design of electrostatically-actuated micro-structures and discuss its implementation in a software tool called IDEA. The main advantage of this approach is that it considerably reduces problems associated to coupling [...]

An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs

Autran J-L, Munteanu D., Tintori O., Aubert M., Decarre E., CNRS, FR

An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main [...]

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T., CNRS, FR

A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization

Renard C., Scheiblin P., de Crécy F., Ferron A., Guichard E., Holliger P., Laviron C., CEA-LETI, FR

The accurate prediction of arsenic activation after spike annealing is mandatory for Ultra Shallow Junction (USJ) sheet resistance optimization for advanced NMOS transistors engineering. For the first time, we propose a fast and efficient methodology [...]

Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model

Jaud M-A, Barraud S., Le Carval G., CEA-LETI, FR

With the growing use of wireless electronics systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S?D) have recently shown that it will [...]

Novel 2D Interfaces for Nanoelectrospray-Mass Spectrometry

Arscott S., Le Gac S., Druon C., Tabourier P., Rolando C., USTL, FR

This work concerns the development, fabrication and testing of novel 2D nanoESI emitter tips. The design of the emitter tips follows a fountain pen model; fabrication relies on the use of the negative photoresist SU-8. [...]

Modeling of the Dielectrophoretic Forces Acting upon Biological Cells: A Numerical Comparison between Finite Element/Boundary Element Maxwell Stress Tensor Methods and Dipole Point Approach

Benselama A., Pham P., Canot É., CEA, FR

Maxwell Stress Tensor (MST) method is investigated in this study to quantify the degree of approximation made with the point dipole method in respect to dielectrophoresis (DEP) in microdevices. Latex particles and biological cells immersed [...]

Numerical Modeling of Diffusion in Extracellular Space of Biological Cell Clusters and Tumors

Berthier J., Rivera F., Caillat P., CEA-LETI, FR

Biological cluster of cells may be seen as porous media, where the cells are the “solid grains” and the extracellular space (ECS) the “pores”. It is often the case in dense clusters of cells that [...]

Multi-Tunnel-Junction Memory : Analyses of Feasibility for Non-Volatile Memory Applications

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., CEA-LETI, FR

MOSFET Memories based on quantum dots have been investigated extensively because of their promising applications to non-volatile and low voltage memories. Among these memories, the Multi-Tunnel-Junction Memory (MTJM) appears to be a promising concept for [...]