CN – Page 15 – TechConnect Briefs

Nonparabolicity Effects of the Ultra-thin Body Double-gate MOSFETs

Lou H., Peking University, CN

In this paper, the band-structure of ultra-thin body (UTB) double-gate (DG) MOSFETs is calculated by empirical tight-binding model, and the the nonparabolicity effects are included in the model by the modified Schrödinger equation with the [...]

Numerical evaluation of growth conditions of GaN-based LEDs in multiwafer MOCVD reactor

Yang L., Zhang J., Hu J., Shanghai University, CN

In this paper, numerical evaluation of growth conditions of GaN in multiwafer planetary MOCVD reactor was carried out. The growth of GaN films using TMGa as a precursor, hydrogen and nitrogen as carrier gas was [...]

A Regional Model for Threshold Switching in Phase Change Memory

Wang L., Peking University Shenzhen Graduate Schoo, CN

In this paper, a regional model for threshold switching is presented based on the space charge effect in Phase Change Memory (PCM). In this model, the PCM unit is divided into two parts according to [...]

Thin film transistors with printed semiconductive oxide channel and silver source-drain electrodes

Chen Z., Cui Z., Suzhou Institute of Nano-tech and Nano-bonic, Chinese Academy of Sciences, CN

In order to make all-printed thin-film transistors, the key issue such as the interfacing effect between printed electrodes and printed semiconductive channel layer has to be solved.In this study, thin film transistors were fabricated by [...]

Comb Finger Capacitive Micro Wind Senor

Zhao Z., Han Y., Du L., Fang Z., Wang X., Institute of Electronics,CAS, CN

This paper reports a novel micro wind sensor with comb finger shaped structure based on MEMS technology and capacitive sensing principle, which can measure wind speed and direction simultaneously. The proposed sensor was theoretically analyzed [...]

An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

Zhang C., Peking University, CN

In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift [...]

Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity

Xu J., Peking University, CN

Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation [...]

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Zhang X., Peking University, CN

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF [...]

FinFET reliability issue analysis by forward gated-diode method

Liu Z., PKU HKUST Shenzhen Institution of IER., CN

The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed [...]

Self-assembly of Nanostructured ZnO-based Homojunction by Two-step Method

Changand Y.Q., Lu Y.D., Guo J.L., Cui X.D., Yang L., Wang Y.W., Long Y., University of Science and Technology of Beijing, CN

In this work, self-assembly of radial nanostructured ZnO homojunction were synthesized by a kind of two-step method. A supplementary growth mechanism is used to explain the formation of nanostructured ZnO homojunction. Photoluminescence (PL) spectra reveals [...]