China
High performance ZnO-based thin film transistor with high-κ gate dielectrics fabricated at low temperature
Han D.D., Cai J., Wang L.L., Wang W., Wang Y., Wang L.L., Wang W., Wang Y., Ren Y.C., Li S.J., Wang L.L., Wang W., Wang Y., Zhang S.D., Peking University, CN
We report on the fabrication and characteristics of low-driven-voltage and high mobility the thin film transistors (TFTs) using ZnO as an active channel layer grown by using radio frequency (rf) magnetron sputtering technique. The TFT [...]