BR – Page 11 – TechConnect Briefs

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

Galup-Montoro C., Schneider M.C., Arnaud A., Klimach H., Universidade Federal de Santa Catarina, BR

This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, [...]

Nanostructured Metallic Thin Films: Measurement of Critical Exponents

Melo L.L., Farias R.J.C., Salvadori M.C., Cattani M., University of Sao Paulo, BR

We have deposited metallic films (Au, Pt) on silicon substrates. The deposition technique was the Metal Plasma Immersion Ion Implantation and Deposition. Their roughnesses have been measured using a Scanning Tunneling Microscope. From these roughnesses, [...]

Effect of impurities in the breaking of Gold nanowires

da Silva A.J.R., da Silva E.Z., Novaes F.D., da Silva A.J.R., da Silva E.Z., Fazzio A., Universidade de Sao Paulo, BR

Surprisingly large interatomic distances, in the range of 3.6-4.0 Å, have been reported for one atom thick gold nanowires by various experimental groups. From a theoretical viewpoint, no one has been able to reproduce the [...]

Young Modulus Measurement of Nanostructured Palladium Thin Films

Vaz A.R., Salvadori M.C., Cattani M., Institute of Physics of the University of Sao Paulo, BR

Young moduli (E2) of nanostructured metallic thin films are determined by measuring the resonance frequencies of AFM cantilevers. The cantilevers have been uniformly coated with metallic films. The E2 is determined using the vibrating beam [...]

Adsorption of Gold Atoms on Carbon Nanotubes

da Silva A.J.R., da Silva E.Z., Carrijo Faria J., da Silva A.J.R., da Silva E.Z., Fazzio A., Universidade de Sao Paulo, BR

We study in detail the adsorption of Au on single walled carbon nanotubes (SWCN). All our results are based on ab initio total energy Density Functional Theory calculations using numerical orbitals as basis sets. We [...]

Diamond Replicas on Silicon Substrate

Martins D.R., Mansano R., Verdonck P., Salvadori M.C., University of Sao Paulo, BR

Most microelectromechanical system (MEMS) devices have been based on silicon. This is due to the technological know-how accumulated on the manipulation, machining and manufacturing of silicon. However, the silicon properties are poor, especially when compared [...]

Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Gouveia-Filho O.C., Universidade Federal de Santa Catarina, BR

This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We [...]

Gas Flow Simulation in a PECVD Reactor

da Silva A.N.R., Morimoto N.I., LSI – EPUSP, BR

In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The [...]

Gas Flow Simulation in a PECVD Reactor

da Silva A.N.R., Morimoto N.I., LSI – EPUSP, BR

In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The [...]

Numerical Analysis of a Microfluidic Oscillator Flowmeter Operating with Gases or Liquids

Simões E.W., Furlan R., Pereira M.T., Laboratório de Sistemas Integráveis - Escola Politécnica da Universidade de São Paulo, BR

We analyzed microfluidic oscillators operating with liquids (water, isopropilic alcohol, and acetone) or gases (nitrogen, argon, and carbon dioxide), using numerical simulation. The possible applications include rapid measurement and control of low fluid flows in [...]