Papers:
Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials
Barium-Strontium-Titanate, BST, in the stoichiometry Ba0.7Sr0.3TiO3 to Ba0.5Sr0.5TiO3 is been considered as a promising candidate to enter into the DRAM manufacturing technology. The incompatibility between the temperatures required to crystallize the ferro/para-electric layer into the [...]
The Level-Set Method for Modeling Epitaxial Growth
A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. [...]
Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method
Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon technology. The change is driven by the lower electrical resistivity of copper, which decreases power consumption and permits increased central processor [...]
A Physically-Based Model for Oxidation in a Circular Trench in Silicon
Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US
Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]
Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation – Application to via Filling
In this paper, we study the void formation during via filling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the [...]
Gas Flow Simulation in a PECVD Reactor
In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The [...]
Rule Based Validation of Processing Sequences
In conventional mechanical engineering the development of a product is influenced only little by the specific requirements of the fabrication processes. When looking at the domain of micro mechanical devices this circumstance is no longer [...]
Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam
In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was [...]
The Numerical Simulation of a Substractive Process for the Fabrication of 3-D Low Temperature Co-Fired Ceramics Packaging Structures and Devices: Jet Vapor Etching
Ramos I., García L., Furlan R., Santiago-Aviles J.J., Pereira M.T., University of Puerto Rico at Humacao, US
We applied numerical simulation in order to gain knowledge and insight into the physical processes associated with Jet Vapor Etching, a subtractive process used in the machining of Low Temperature Co-Fired Ceramic (LTCC) tapes. Also, [...]
Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation
B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Published: April 22, 2002
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-6-3