Papers:
Detection of diffused III-V materials in high-k oxides during atomic layer deposition and annealing
Cabrera W., Dong H., Brennan B., O’Connor É., Carolan P., Galatage R., Monaghan S., Povey I., Hurley P.K., Hinkle C.L., Chabal Y., Wallace R.M., University of Texas at Dallas, US
In this study we look at the impact of ALD HfO2 and Al2O3 on both InGaAs and InP substrates, with the aim of determining if there is any diffusion of substrate atoms into the high-k [...]
Report on the Atomically Precise, No Interface, Device Regime Workshop
The paper will present the findings of a workshop held in June 2012 at NIST to explore a new device regime with no materials interfaces and atomically precise placement of dopant atoms. The participants concluded [...]
Performance Comparison of Non-planar MOSFETs
To gain insights into device variability, device scalability and even circuit performance, more comprehensive simulation data are presented. FinFET shows the highest transconductances corresponding to aforementioned highest IDLIN and IDSAT. Regarding process variation, same W¬Si/D [...]
Doping-less Bipolar Transistor with fT Surpassing that of Conventional BJT
An innovative ultrathin SOI based bipolar charge plasma transistor BCPT for RF circuit applications is presented in this paper. The proposed device structure exhibits high cut-off frequency and an improved current drive while still maintaining [...]
Mid-IR integrated nanophotonics for chip-scale quantum optics applications
A mid-IR nanophotonic architecture based on inter-sub-band transitions, along with experimental verification of the use of surface depletion as a means to control the host materials absorption properties is presented. Finite element simulations suggest this [...]
Electro-thermal aspects in carbon based interconnects
The tremendous rise in Joule-heating in conventional ICs has led down ITRS to ensure on material alternatives that surpasses break-down current density and thermal conductivity (κ) beyond room temperature (RT). In recent years, suspended metallic [...]
Surface Passivation of GaAs Nanowires Ensembles for Photovoltaic Applications
Fabrication, electrical characterization and analytical modeling of an AlInP-passivated GaAs NW ensemble is presented. Novel processing steps were used to fabricate NW ensemble devices which were subsequently characterized electrically and fit with an analytical model, [...]
Nanoelectronic SET-based core for Network-on-chip architectures
Nanoelectronics is a very promising step the world of electronics is taking. It is proved to be more efficient than the microelectronic approaches currently in use, mainly in terms of area and energy management. A [...]
Photoconductivity of Reduced Graphene Films
In this paper, we report large photocurrents in air-assisted depositions of reduced graphene films (derived from reduced single layer graphene oxide) upon illumination with near-infrared (NIR) light. NIR-induced charge carrier generation and subsequent separation at [...]
Putting The World In A Spin – Fibercore’s Spun Optical Fibers For The Current Sensor Industry
The development and growth of spun optical fibers for Faraday effect current sensors is a perfect example of how having a killer technology also requires a killer application. Spun fibers have sat in the shadows [...]
Analysis of Pulsed-laser Plasmon-enhanced Photothermal Energy Transfer with Applications
The ability to control the generation and transport of thermal energy with precision at the nanoscale has drawn increased interest in recent years, especially for emerging applications in fields such as nanoparticle synthesis, imaging and [...]
Structural Color Generation in Silicon Nanowires Enable Low-Cost Refractive Index Sensors
Structural colors are generated using waveguiding and diffractive effects in ordered silicon nanowire arrays. Tunable colors can be achieved by changing the angle of incidence. The generated colors are used for refractive index sensors with [...]
Mid-infrared Silicon Platform for Chip-scale Chemical Sensors
Lin H.-Y.G., Lin P-T, Lin H.-Y.G., Lin P-T, Singh V., Patel N.S., Hu J., Richardson K., Luzinov I., Hensley J., Kimerling L., Murthy Agarwal A., Massachusetts Institute of Technology, US
Mid-Infrared optofluidics based silicon sensor platforms are demonstrated. Silicon is a great candidate for mid-infrared optofluidics for the following reasons: (1) Silicon has a broad transmission window up to 7 um (2) Silicon offers CMOS [...]
Active Pixel CMOS Image Sensor with Single Transistor Architecture
Liang H., Zhang A., Zhang D., Zhang G., Zhang A., Zhang D., Zhang G., He J., Su Y., Zhang A., Zhang D., Zhang G., PKU-HKUST Shenzhen-Hongkong Institution, CN
CMOS active pixel image sensor with single transistor architecture (1T CMOS APS) is proposed in this paper and verified by experiment data. By switching the photo sensing pinned diode, reset and select can be achieved [...]
Mid-infrared Silicon Microphotonic Cavities with High Resonance of Q~10^5
Lin P-T, Singh V., Cai Y., Patel N.S., Kimerling L., Agarwal A.M., Massachusetts Institute of Technology, US
One dimensional photonic crystal 1D-PhC silicon waveguide resonators with quality factor, Q~10^5, are demonstrated at mid-infrared wavelengths between 2 um to 5 um. Silicon has several advantages for mid-infrared applications including its broad mid-infrared transmission [...]
Plasmonic nanophotonics and its applications
Study of surface plasmnon polariton (SPP) effect is a fundamental scientific cross-disciplinary research area with academic importance and critical application potential. We discuss methods for the manipulation of light and plasmonic properties with nanostructures. With [...]
Photoconductivity of GaN Nanowires
Gallium nitride nanostructures continue to attract great interest due to their applications in optoelectronic devices (UV photodetectors, and light-emitting devices), high-power/high temperature electronics, nanosensing, and piezoelectric nanogenerators. This paper presents a systematic photoconductivity investigation of [...]
Plasmonic Enhanced Chiral Metamaterials
Metamaterials are artificial materials that are engineered to produce various interesting phenomena such as negative refractivity and sub-diffraction-limit imaging. The majority of metamaterials for THz applications have been fabricated using “top-down” techniques. These methods tend [...]
Transient and steady-state dark current in amorphous selenium avalanche radiation detectors
Amorphous selenium (a-Se) is currently the only commercially viable X-ray photoconductor in direct conversion detectors. However, the a-Se detector is not perfect and it has low conversion gain (X-ray to free electron-hole pair, EHP, generation) [...]
Fluorescent Microspheres as Tags for Anti-Counterfeiting of Textiles
The goal of this project is to create an anti-counterfeiting system for textiles that takes advantage of advanced materials and mobile readers. Current anti-counterfeiting systems are challenged in achieving the desired characteristics of lack of [...]
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4822-0584-8