Papers:
Silicon lens arrays for wafer level packaging of IR-sensors
A new process technology has been developed for a cost efficient production of refractive convex lenses made of silicon. These lenses are produced as lens arrays on standard 8 inch silicon wafers to allow the [...]
A novel co-resonantly coupled cantilever sensor platform
Dynamic cantilever sensors are used for many different applications, for example in material’s research to study magnetic properties of small particles and thin films, in biology for real-time observation of cell processes and as balances [...]
Microsystems based sensor fusion enabling standalone navigation
There is a need for effective, standalone indoor navigation device which not only can track users in unknown environments but also assist their navigation by obstacle avoidance and path guidance. This research developed a state-of-the-art [...]
Numerical Simulation of Pulsed Electromagnetic Field Tissue Therapy
Sukhotskiy V., Marepalli L.K., Verma A., Fournier J., Gellman G., Bacon W., Furlani E.P., University at Buffalo, US
Applications of pulsed electromagnetic field (PEMF) therapy have grown steadily over the last 50 years, as clinical evidence of effectiveness for various treatments, e.g. pain relief, bone and tissue (wound) healing etc., has emerged [1]. [...]
Display Compatible pMUT Device for Mid Air Ultrasound Gesture Recognition
1. BACKGROUND Recently, piezoelectric micromachined ultrasound transducers (pMUT) have proved their potential to make a reliable 2D ultrasound array. As shown in Fig. 1, the displacement of piezoelectric material layer is galvanised by electrical signals/acoustic [...]
Analytical Modeling of Microfluidic Cantilever Sensor with Evaporating Ethanol
Resonating microcantilevers are widely used for myriad biochemical sensing applications. Small samples can be characterized for their physical [1], chemical [2], and thermal [3] properties. An example of such a sensor is shown in Fig. [...]
An Effective Mobility Model for Tunneling Double-Gate MOSFET (T-FinFET)
He J., He X., Pan J., Liu J., Li C., Liu J., Hu G., Ma G., He J., He X., Chan M., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
We have derived an analytical model for the effective field (Eeff) model of undoped Ultra-Thin Body (UTB) Double Gate (DG) SOI Tunneling MOSFETs ( T-FinFET) from the solution of the Poisson’s equation in this paper [...]
Hot Carrier Effect and Oxide Reliability of T-FinFET Devices
He J., He X., He Y., Hu G., Li C., Liu J., He J., He X., He Y., Liu J., Ma G., He J., He X., He Y., Pan J., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Hot-carrier effect and oxide reliability of CMOS T-FinFET with 2.1nm-thick gate-SiO2 were investigated. It was found that hot-carrier immunity improves as the T-FinFET fin width (body thickness) decreases, which facilitates gate-length scaling, while it is [...]
Journal: TechConnect Briefs
Volume: 4, Informatics, Electronics and Microsystems: TechConnect Briefs 2018
Published: May 13, 2018
Industry sector: Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 978-0-9988782-1-8