Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X.
Peking University, CN
Keywords: HCI, mobility, model, Nanoscale FinFET, reliability
A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. It is concluded that in the depletion and weak reverse region, the degradation of carrier mobility is the dominant impact on the current decrease; in the strong inversion region, the current decrease is determined by the loss of inversion charges trapped in the interface states. With the analysis, a compact HCI model for Nanoscale FinFET is derived and validated in both forward and reverse operation mode. The simulation result agrees very well with the measured data.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 375 - 378
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4398-1784-1