Papers:
Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures
Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to [...]
Background Charge Insensitive Single-Electron Memory Devices
In a Single-Electron Memory Cell (SEMC) one bit of information is represented by the excess or shortfall of a small (¡_1) number of electrons on the floating gate (FG). We present experimental results on the [...]
Logic Optimization and Technology Mapping for CAEN
This paper considers the architectures and design issues involved in creating a nano-electronic computing system. We focus on the problems of technology dependent optimization and technology mapping for Chemically Assembled Electronic Nanotechnology (CAEN). We present [...]
Clocked Quantum-dot Cellular Automata circuits
We present an experimental demonstration of novel Quantum-dot Cellular Automata (QCA) circuits utilizing clocked architecture -a QCA latch and a two-bit QCA shift register. Devices are fabricated using metal tunnel junction technology and operate at [...]
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 0-9728422-1-7