Papers – Page 48 – TechConnect Briefs

Patterning Technology for Nanomanufacturing

Smith H.I., Walsh M., Zhang F., Hourihan G., Ferrera J., Jaspan M., LumArray, US

We describe a new approach to patterning that circumvents the limitations of techniques that were developed for the semiconductor industry. The new approach, zone-plate-array lithograhy (ZPAL)will enable an expansion of applications of nanoscale science and [...]

Nanoscale Force Induced Size-selective Separation and Self-assembly of Metal Nanoparticles

Zheng Y., Monash University, AU

A simple and versatile nanoscale force induced precipitation approach for the separation of gold nanoparticles (AuNPs) was developed. The AuNPs show sharp size-dependent colloidal stability thresholds as a function of salt concentration. Upon separation, the [...]

New technology for metal nanorods formation

Balucani M., University of Rome “La Sapienza”, IT

Nowadays, Novack et al. proposed a new and efficient approach for producing electricity from sun, using nanoantenna (nantenna) electromagnetic collectors with an efficiencies approaching 84%. The major technical challenge to be solved is the development [...]

Cryostructuration of latexes

Portnaya I., Technion – Israel Institute of Technology, IL

The presented study concerns with structurization of dispersed phase of polymer latexes during their freezing-thawing. It is known that freezing might have disturbed the latexes aggregate stability. In the presented work it was established that [...]

An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

Zhang C., Peking University, CN

In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift [...]

Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity

Xu J., Peking University, CN

Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation [...]

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Zhang X., Peking University, CN

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF [...]

FinFET reliability issue analysis by forward gated-diode method

Liu Z., PKU HKUST Shenzhen Institution of IER., CN

The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed [...]

Correlation of Microstructure and Tribological Properties of Dry Sliding Nanocrystalline Diamond Coatings

Wiora M., Sadrifar N., Brühne K., Gluche P., Fecht H-J., Ulm University, DE

Nanocrystalline diamond (NCD) offers great potential for many micro-mechanical systems, particularly where low friction, reliability and mechanical integrity are of great importance. The reduction of grain size in NCD films to several nanometers is, however, [...]

Automated test system for in-situ testing of reliability and aging behaviour of thermal interface materials

Abo Ras M., Berliner Nanotest and Design GmbH, DE

The on-going need for miniaturization and speed in electronics industry has brought a requirement for better performing thermal management systems. Therefore we have developed a test stand to characterize the aging behaviour of most common [...]