Papers – Page 6 – TechConnect Briefs

Bio-inspired Integrated Circuits for Signal Perception and Processing

Abdel-Aty-Zohdy H.S., Ewing R.L., Oakland University, US

Bio-inspired systems utilizing neural networks and genetic algorithms are presented in this paper for pattern discovery, identification, classification, and optimum choices for Signal Perception and Processing (SPP). Sample applications are presented for: (I) Integrated Intelligent [...]

Magnetic Antidot Arrays with a Storage Density of 10 Gbits/cm2

Xiao Z.L., Han C.Y., Welp U., Wang H.H., Willing G.A., Vlasko-Vlasov V.K., Kwok W.K., Miller D.J., Hiller J.M., Cook R.E., Crabtree G.W., Argonne National Laboratory, US

Large area nickel antidot arrays with density up to 10^10 /cm^2 have been fabricated by depositing nickel onto anodic aluminum oxide (AAO) membranes that contain lattices of nanopores. Electron microscopy images show a high degree [...]

Low Temperature Electronic Properties of Electrospun PAN-Derived Carbon Nanofiber

Wang Y., Santiago-Aviles J.J., University of Pennsylvania, US

The possible sensor application of carbon nanofibers relies on the nanofibers electronic transport. This paper fabricated carbon nanofibers using electrostatic deposition and vacuum pyrolysis techniques. Scanning electron microscope (SEM) and scanning probe microscopes (SPM) images [...]

Mechanical and Semiconductor Properties of Nanophase Amorphic Diamond Coatings for High Power Electronics

Davanloo F., Collins C.B., Agee F.J., University of Texas at Dallas, US

The mechanical and semiconductor properties of amorphic diamond can be employed to improve the high power photoconductive semiconductor switch longevity by coating the switch cathode or anode areas or both. In this work issues concerning [...]

Electron Sources for Massively Parallel Electron Beam Lithography System using Single Vertically Aligned Carbon Nanofiber Cathodes

Guillorn M.A., Whealton J.H., Baylor L.R., Melechko A.V, Merkulov V.I., Hensley D.K., Hale M.D., Kasica R.J., Lowndes D.H., Simpson M.L., Oak Ridge National Laboratory, US

Electron beam lithography using a single beam cannot achieve acceptable throughput levels to become a viable manufacturing technology. The digital electrostatic e-beam array lithography (DEAL) concept under development at the Oak Ridge National Laboratory proposes [...]

Nanoelectronic Devices Constructed Using Individual Vertically Aligned Carbon Nanofibers

Yang X., Austin D.W., Guillorn M.A., Merkulov V.I., Melechko A.V, Lowndes D.H., Simpson M.L., Oak Ridge National Laboratory, US

We are fabricating active nanoscale electronic devices based on Vertically Aligned Carbon Nanofibers (VACNF). VACNFs are synthesized in a high-density Plasma-Enhanced Chemical Vapor Deposition (PECVD) process that provides a high degree of control of the [...]

Nano-sensors Based on Nanotubes: Deformed-nanotubes transport

Farajian A.A., Yakobson B.I., Mizuseki H., Kawazoe Y., Tohoku University, JP

The main purpose of the present work is to establishing a correspondence between mechanical deformation and transport properties, which is presumably useful in nano-sensor applications. As a byproduct of this study, the potential differences in [...]

CB Nanosensors

Jarvis N.L., Snow A.W., Wohltjen H., Smardzewski R.R., Edgewood Chemical & Biological Center, US

A new class of nanometer-scale, low power, solid-state devices is being investigated for the detection of hazardous vapors. These chemical vapor sensors are comprised of nanometer-sized gold particles encapsulated by monomolecular layers of alkanethiol surfactant [...]

Self-Heating Effects in GaN/AlGaN Heterostructure Field-Effect Transistors and Device Structure Optimization

Filippov K.A., Balandin A.A., University of California Riverside, US

In this paper we present results of our simulation of temperature rise in GaN/AlGaN HFETs characterized by different geometry, layered structure, doping density and substrate type. We do note make simplifying assumptions of the uniform [...]

Multi-Tunnel-Junction Memory : Analyses of Feasibility for Non-Volatile Memory Applications

Le Carval G., Le Royer C., Le Carval G., Le Royer C., Sanquer M., CEA-LETI, FR

MOSFET Memories based on quantum dots have been investigated extensively because of their promising applications to non-volatile and low voltage memories. Among these memories, the Multi-Tunnel-Junction Memory (MTJM) appears to be a promising concept for [...]