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HomeTopicsModeling & Simulation of Microsystems

Topic: Modeling & Simulation of Microsystems

Switching Dynamics of Double Barrier Josephson Junction Based Qubit Gate

Shafraniuk S.E., Nevirkovets I.P., Ketterson J., Northwestern University, US
The double barrier SINIS junctions (here S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with a nanoscopic N spacer are potentially capable of performing quantum logic operations (so-called qubits) [...]

Conductance of a Disordered Double Quantum Wire in a Magnetic Field: Boundary roughness scattering

Arapan S.C., Korepov S.V., Liberman M.A., Johansson B., Uppsala University, SE
Boundary roughness scattering in disordered tunnel-coupled double quantum wires in the presence of a magnetic field is considered. The low-temperature conductance as a function of applied magnetic field is calculated for different structure and disorder [...]

RAM Design Using Quantum-Dot Cellular Automata

Walus K., Vetteth A., Jullien G.A., Dimitrov V.S., ATIPS Laboratory, CA
One of the most novel and powerful emerging nanotechnologies is quantum computing. This paper proposes a design for a parallel random-access memory (RAM) using Quantum-Dot Cellular Automata (QCA). QCA has the potential of becoming the [...]

Transition of the Ground State in a Coupled N-layer Quantum Dot

Xie W., Guangzhou University, CN
There has been growing interest in the physics of quantum dots (QDs) in recent years because of the rapid development of fabrication technology. Most theoretical and experimental studies have been so far focused on the [...]

Quantum Computation with Persistent-current Aharonov-Bohm Qubits and Qugates

Kulik I.O., Bilkent University, TR
We propose that Aharonov-Bohm effect can be used for quantum computation. The effect consists of existence of persistent currents in mesoscopic/nanoscopic loops of normal metal or semiconductor in a magnetic field perpendicular to loop. Three-site [...]

Quantum Effects, Quantum Devices and Spintronics

Characterization of Microscale Material Behavior with MEMS Resonators

White C.D., Xu R., Sun X., Komvopoulos K., University of California-Berkeley, US
The reliability of MEMS devices greatly depends on precise characterization of material behavior at the micron scale. This paper presents a novel material characterization device for fatigue testing. The fatigue specimen is subjected to multi-axial [...]

A Modeling Approach based on Laminated Plate Theory to Design Microbeams

Mantell S.C., Longmire E., Wolters D., University of Minnesota, US
MEMs microbeams consist of many thin material layers. This thin layered structure is very similar to that of laminated composite plates in which thin layers of fiber reinforced plastic are stacked and cured. Both the [...]

Adaption of the 3w-Method for Testing of MEMS

Raudzis C., Schatz F., Wharam D., Corporate Research, Robert Bosch GmbH, DE
Automated wafer level testing of MEMS requires methods to measure geometry and material related parameters by purely electrical means. The three omega method to measure the thermal conductivity seems to be appropriate for this task. [...]

Modeling Electrothermal Plastic Deformation

Geisberger A., Sarkar N., Ellis M., Skidmore G., Zyvex Corporation, US
Self-assembly of three-dimensional microstructures has been achieved using EPDA (Electrothermal Plastic Deformation Assembly). The EPDA process, in this case, is dependent on gold yielding within a gold and polysilicon bimorph. To plastically deform the bimorph [...]

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