Modeling & Simulation of Microsystems – Page 14

Electronic Properties and Transport in Silicon Nanowires

Batra I.P., Ciani T., Boddupalli D., Soberano L., University of Illinois at Chicago, US

In an integrated silicon nanotechnology environment, it may be desirable to replace metallic inter-connects like Al, with Silicon metallic wires. This motivated us to investigate the electronic and transport properties of quasi one-dimensional (1D) Silicon [...]

Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

Watling J.R., Asenov A., Brown A.R., Svizhenko A., Anantram M.P., University of Glasgow, UK

We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain [...]

Initial State Preparation and Stability in Narrow Band-Gap Semiconductor Qubits

Gilbert M.J., Akis R., Ferry D.K., Arizona State University, US

The output of a quantum computing system depends on the quality of the preparation of the initial state of the qubit or qubits to be used in the subsequent computations. Here, we have defined a [...]

Quantum-Classical Transition Induced by Electrical Measurement

Mozyrsky D., Martin I., Los Alamos National Laboratory, US

A model of an electrical tunnel junction coupled to a mechanical system (oscillator) is studied to simulate the dephasing effect of measurement on a quantum system. The problem is solved at zero temperature under conditions [...]

Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering

Kosina H., Nedjalkov M., Selberherr S., Institute for Microelectronics, TU Vienna, AT

A Quantum Monte Carlo (QMC) method taking into account both interference and dissipation effects is presented. The method solves the space-dependent Wigner equation which includes semi-classical scattering via the Boltzmann collision operator. The classical force [...]

Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon

Matsuda K., Nakatsuji H., Kamakura Y., Naruto University of Education, JP

Recently, strained-Si on Si1-xGe_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is [...]

Nanocomputer Systems Engineering

Frank M.P., University of Florida, US

Regardless of whichever precise nano-device technology ends up being most viable for general-purpose computing, the design of densely-packed computer systems comprised of nanometer-scale bit-devices offers a number of interesting new challenges for the field of [...]

A Computational Investigation of Electron Energy States for Vertically Coupled Semiconductor Quantum Dots

Li Y., Lu H-M., National Nano Device Laboratories and National Chiao Tung University, TW

We study the induced property of ground and excited state energies of electrons confined in 3D nanostructures that the In_xGa_1-xAs QDs are embedded into GaAs matrix and have a vertically coupled topology. The disk-(DI) and [...]

Critical Current Oscillations versus Pureness of Superconductor-ferromagnet Nanoscopic Multilayers

Shafranjuk S.E., Ketterson J., Northwestern University, US

In our report we study how the oscillations and reentrant behaviour of critical parameters depends on the elastic scattering of electrons on atomic impurities in S/F multilayers. The expressions for the electric supercurrent and for [...]

Quantum-like Computation and “Thinking” Based on Classical Oscillations

Orlov Y.F., Cornell University, US

Classical systems containing decision-making elements can possess quantum-like properties, most importantly interference of probabilities of different decisions. We demonstrate this theoretically using a set of linear numbered oscillators combined with decision-making and other devices. This [...]