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HomeTopicsInformatics, Modeling & Simulation

Topic: Informatics, Modeling & Simulation

Analysis of Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer and High Acceptor Density in Buffer Layer

Ueda S., Tomita R., Kawada Y., Horio K., Shibaura Institute of Technology, JP
AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Analysis of Breakdown Characteristics in Field-Plate AlGaN/GaN HEMTs: Dependence on Deep-Acceptor Density in Buffer Layer

Akiyama S., Kondo M., Wada L., Horio K., Shibaura Institute of Technology, JP
We make a two-dimensional analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped semi-insulating buffer layer, and studied how the deep-acceptor density in the buffer layer NDA and the field-plate length LFP affect the breakdown voltage [...]

Analysis of Gate-Length Dependence of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs

Chiba T., Saito Y., Tsurumaki R., Horio K., Shibaura Institute of Technology, JP
We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. We particularly study how the gate lag, drain lag and current collapse [...]

Molecular Dynamics Simulation Study on Nanoelectromechanical Oscillator based on Graphene Nanoflake

Kwon O-K., Kang J-W, Semyung University, KR
Recently graphene has also been highlighted as an ideal lubricant for microelectromechanical systems (MEMSs) and nanoelectromechanical systems (NEMSs), where ‘traditional’ lubricants no longer function normally. Atomic-scale graphene can be fabricated using micro- mechanical chop crack, [...]

Modeling, Informatics, Machine Learning & AI

HPC4Manufacturing Program: A National Laboratory – Industry Partnership in High Performance Computational Simulations for Energy Efficiency

Miles R., Diachin L., Lawrence Livermore National Laboratory, US
The HPC4Manufacture program is a new EERE-sponsored program with the aims of introducing industry to High Performance Computing for advanced science and engineering simulations, transferring advanced simulation techniques developed at the National Laboratories to industry [...]

A new EKF SLAM algorithm of lidar-based AGV fused with bearing information

Ye C. Zhou H.X., Stevens Institue of Techonlogy, US
Lidar-based Automated Guided Vehicle (AGV) is widely used in various kinds of transportation tasks as a kind of intelligent logistics equipment. To realize the navigation, lidar-based AGV has to know its location and pose when [...]

Analysis of Breakdown Characteristics of Field-Plate AlGaN/GaN HEMTs with a High-k Passivation Layer

Kabemura T., Hanawa H., Horio K., Shibaura Institute of Technology, JP
It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. As another way [...]

Effect of Deep-Acceptor Density in Buffer Layer on Breakdown Voltage of AlGaN/GaN HEMTs with High-k Passivation Layer

Ueda S., Kawada Y., Horio K., Shibaura Institute of Technology, JP
AlGaN/GaN HEMTs are now receiving great interest for application to high-power microwave devices and high power switching devices. To improve the breakdown voltage, the introduction of field plate is shown to be effective, but it [...]

Simulation of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

Nakano K., Hanawa H., Horio K., Shibaura Institute of Technology, JP
It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. However, it increases the parasitic capacitance, leading to the degradation of high-frequency performance. As another way to improve [...]

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