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HomeTopicsChemical, Physical & Bio-Sensors

Topic: Chemical, Physical & Bio-Sensors

Optimal Design of A Tuning Fork Gyroscope and Its Testing Experiment

Dong Y., Tay F.E.H., Wen Y., Yuan X., Chen W.T., National University of Singapore, SG
The eigenfrequency of a MEMS Tuning Fork Gyroscope (TFG) is calculated using a formula derived from Rayleigh method. From this formula, the objective function for the optimal design is established. Then two methods to solve [...]

Design of Piezoresistive Silicon Cantilevers with Stress Concentration Regions (SCR) for Scanning Probe Microscopy (SPM) Applications

Gupta A., Bashir R., Neudeck G.W., McElfresh M., Purdue University, US
This paper describes and evaluates the incorporation of novel Stress Concentration Region (SCR) in silicon based cantilevers to enhance piezoresistive displacement, force, and torque sensitivities. In brief, SCR is a region, on the cantilever, with [...]

Analysis of Anodic Bonding and Packaging Effects in Micro Sensors

Shing T-K, Industrial Technology Research Institute, TW
Anodic bonding is quite popular in making micro-sensors since it can bond sodium-rich glass to silicon or virtually any metals with good adhesion strength in lower temperature. It is well known that this process will [...]

The Effect of Thermal Boundary Conditions and Scaling on Electro-Thermal-Compliant Micro Devices

Mankame N., Ananthasuresh G.K., University of Pennsylvania, US
Electro-thermal micro actuators that operate by virtue of constrained thermal expansion induced by Joule heating, have recently received considerable attention. We use electro-thermal actuation to create monolithic compliant devices with embedded actuation in which the [...]

Simulation for Low Temperature Coefficient Design of Piezoresistive and Hall Sensors

Matsuda K., Kanda Y., Naruto University of Education, JP
Simulation for the temperature coefficient of piezoresistive and Hall sensors is presented. Carrier and ionized impurity concentrations in the n-type silicon gage are calculated from the charge balance equation by applying Newton iteration scheme. The [...]

Modeling and Control of Nanomirrors for EUV Maskless Lithography

Chen Y., Shroff Y., Oldham W.G., University of California, US
The design of mirrors for use in EUV maskless lithography is presented in this paper. We propose a novel nanomirror system with a linear comb actuator, which has favorable stability and performance. A bias voltage [...]

Effects of Surface Properties on the Effective Electrical Gap of Microelectromechanical Devices Operating in Contact

Chan E.K., Dutton R.W., Stanford University, US
The effective electrical gap between two conducting surfaces sandwiching a thin dielectric layer varies with applied voltage and pressure. Improved methods for measuring and modeling this variation are presented. Optical surface profile measurements of fixed-fixed [...]

Applications: MEMS, Sensors

3-D Finite Element Modeling Schemes for Design and Simulation of VR Microactuator

Mohamed A., El-Hagry M., Electronics Research Institute, EG
This paper describes a 3-D finite element modeling scheme for the designing and analysis of a powerful variable ñ reluctance (VR) microactuator. The device to be modeled having the basic principles of operation of reluctance [...]

Modeling of SiC Lateral Resonant Devices Over a Broad Temperature Range

DeAnna R.G., Roy S., Zorman C.A., Mehregany M., US Army Research Laboratory, US
Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si substrate are presented as resonant frequency versus temperature. The suspended elements are etched from a 2 mm, 3C-SiC film grown at [...]

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