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HomeSectorsAdvanced Materials & Manufacturing

Sector: Advanced Materials & Manufacturing

Coulomb Oscillations at Room-Temperature of Single-Walled Carbon Nanotube Field-Effect Transistors

Ohno Y., Asai Y., Maehashi K., Inoue K., Matsumoto K., Osaka University, JP
Single-walled carbon nanotube field-effect transistors with thin tunnel barriers were investigated, and room-temperature single-electron transistor (SET) operation was realized. Single-walled carbon nanotubes were grown by thermal chemical vapor deposition at 820 degrees Celsius for 10 [...]

Modelling the Stress Transfer in CNT Composite using Finite Element Method

Chaboki A., Sadrnejad S.A., Yahyaeii M., University of Sydney, AU
Since carbon nanotubes have special mechanical properties, they tend to be used as reinforcements in composites. The stress transfer between the nanotubes and the matrix at the interface critically controls the mechanical properties of these [...]

Novel Solid Phase Synthesized Carbon Nano Tube using Tube Control Agent

Nguyen K.C., Nguyen S.T., Do S.T., Le T.V., Nguyen K.C., Nguyen S.T., SAIGON HI TECH PARK, VN
Even though gas phase reaction using plasma CVD reactor seems to be the most promising for scale up of single walled and multi walled carbon nano tube (CNT) products, it still remains several serious issues [...]

Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement

Lu Y., Dai H., Nishi Y., Stanford University, US
Recently, we have been able to approach the ultimate vertical scaling limit of carbon nanotube field effect transistors (FETs) and reliably achieve S ~ 60 mV/decade at room temperature, by non-covalent functionalization of single walled [...]

ALTRAS-CNFET: Full-Band Based Quantum Transport Simulator for Carbon Nanotube Field Effect Transistor Engineering: From Chirality to Device Performance

Tao Y., Liu F., Bian W., Man T.Y., Chan M., He J., Shenzhen Graduate School, Peking University, CN
ALTRAS-CNTS is a powerful full-band based quantum transport simulator for CNT energy-band and CNFET performance calculation. It can directly compute device tunneling gate current in the radial direction, drain current in the channel and other [...]

Studies of Nanotube-based Co-axial and Resonant Oscillators

Xiao S.P., Andersen D., Hou W.Y., The University of Iowa, US
In this paper, we first investigate mechanisms of nanotube-based co-axial oscillators, shown in Figure 1, based on molecular dynamics simulation. We mainly study the interlayer friction between the outer tube and the inner tube when [...]

Fabrication of Cu-encapsulated Carbon Nanotube Inductors

Lee B.C., Lee J-O, Lee B.C., Lee J-O, Choi Y.K., Yoon J.-B., Korea Institute of Science and Technology(KIST), KR
In this works, we developed a top-down fabrication method to pattern and form carbon nanotube(CNT) interconnects with Cu encapsulation. Using this method, we fabricated spiral Cu-encapsulated CNT inductors for RF ICs and investigated the inductance [...]

Synthesis of Nanostructures from Carbides Sheets

Diaz Barriga Arceo L., Garibay Febles V., Orozco E., Zeifert B., Palacios Gonzalez E., German C.R.Sr., Rios-Guerrero L., Leyte Guerrero F., Instituto Politecnico Nacional, MX
Nanotubes and nanoparticles were obtained from a lamellar solid phase using a two step method: mechanical alloying (MA) and heat treatment. MA was used to prepare the monometallic carbide and the bimetallic carbides by milling [...]

Chemistry: The solution for making high performance SWNT-based materials

Simard B., National Research Council of Canada, CA
We explore the chemistry of reduced SWNT and show that it is more advantegous than the chemistry of neutral SWNT. In particular we will show a novel and cost saving functionalization procedureand how it leads [...]

Directed Growth of Carbon Nanotubes Utilizing Plasma Induced Surface Charging Voltage

Law J.B.K., Koo C.K., Thong J.T.L., National University of Singapore, SG
In this work, we present a method for directed lateral growth of CNTs between electrodes on a substrate during an in-situ CNT growth process, by utilizing plasma induced charging inherent in a Radio Frequency (RF) [...]

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