Enz C., Bucher M., Porret A.S., Sallese J.M., Krummenacher F.
Swiss Center for Electronics and Microtechnology, CH
Keywords: charge-based model, EKV MOS transistor
This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and all its components are described. It is also shown that the charge-based approach allows to derive the gm/ID characteristic that is valid in all modes of inversion.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 666 - 669
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1