Papers – Page 980 – TechConnect Briefs

Predictive Process Simulation and Ab-initio Calculation of the Physical Volume of Electrons in Silicon

Windl W., Daw M.S., Ohio State University, US

Recently, we have presented the development of a complete predictive simulation capability for the effects of general anisotropic nonuniform stress on dopant diffusion in silicon [M. Laudon, N. N. Carlson, M. P. Masquelier, M. S. [...]

The Use of Quantum Potentials for Confinement in Semiconductor Devices

Asenov A., Brown A.R., Watling J.R., Glasgow University, UK

As MOSFETs are scaled into sub 100 nm (decanano) dimensions, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. In this paper we describe the introduction of quantum corrections within a 3D drift [...]

The Landauer Approach to the Critical Source-Channel Barrier in MOSFETs

Lundstrom M., Rhew J-H., Purdue University, US

A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory [...]

Self-consistent Modeling of Open Quantum Devices

Akis R., Shifren L., Ferry D.K., Arizona State University, US

In this paper, we describe a method of simulating electron transport in semiconductor devices that operate in the quantum regime. Specifically, devices formed in which the electrons are confined to two dimensions (2D) and transport [...]

The Use of a Green’s Function Formalism for the Simulation of Semiconductor Device Performance

Jovanovic D., Motorola, US

Non-equilibrium quantum transport simulation techniques (e.g. the generalized Kadanoff-Baym approach) have been in existence for over 40 years but have only recently become numerically viable for the simulation of semiconductor devices. This paper reports on [...]

Simulation of Wigner Function Transport in Tunneling and Quantum Structures

Jacoboni C., Bertoni A., Bordone P., Giacobbi N., University of Modena, IT

The Wigner-function approach to quantum transport in mesoscopic electron devices is presented. The concept of Wigner paths allows the formulation of a Monte Carlo simulation which is quantum mechanically rigorous and yet very similar to [...]

Structural and Electronic Properties of Quantum Dot Surfaces

Galli G., Puzder A., Willilamson A.J., Grossman J.C., Pizzagalli L., Lawrence Livermore National Laboratory, US

We report on recent progress in studying the structural, electronic and optical properties of Si and Ge quantum dots, using first principles calculations. We used both ab initio molecular dynamics techniques and quantum Monte Carlo [...]

Diffusion Mechanisms and Capture Radii in Silicon

Beardmore K., Windl W., Haley B.P., Gronbech-Jensen N., Motorola, US

We have calculated the capture radii for several defect pairs, consisting of dopants and point defects (interstitials I and vacancies V, in silicon. Interaction potentials for I-V, I-B, P-V, and As-V were calculated using the [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Nanoworld Semiconductor Industry – State and Future Challenges of Technology Computer Aided Design

Puchner H., Cypress Semiconductor, US

Several application examples of nanoscale techniques used to influence or enhance the understanding of material properties as well as processing behavior are presented. We will also present a review of first principle density functional theory [...]