Ma X., He J., He X., Li C., He J., He X., Jun P., Hu G., Ren Y., Wang X.
SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Keywords: device physics, graphene field effect transistor (GFET), modeling, numerical method., simulation, THZ performance
A numerical method to simulate THz wave generation and detection of the graphene base field effect transistor (GFET) is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulations have been discussed in detail and some have also been compared with the existing theories, proving the validity of the developed numerical method.
Journal: TechConnect Briefs
Volume: TechConnect Briefs 2019
Published: June 17, 2019
Pages: 275 - 278
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Sensors - Chemical, Physical & Bio
ISBN: 978-0-9988782-8-7