A Cathodoluminescence Study of InGaN/GaN Multiple Quantum Well and N type GaN Structures

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A systematic study of the V-pits in 4 periods of InGaN/GaN multiple quantum well structure (MQW) and defects in n type GaN is investigated by room temperature cathodoluminescence. These MQWs were fabricated on a sapphire substrate by using metal organic chemical vapor deposition. The crystal quality is affected by the lattice mismatch between GaN and the sapphire substrates which results in the generation of a high threading dislocation (TD) density in GaN. Ii is believed that V-defects originate at the InGaN/GaN interface and may cause non-radiative recombination centers thus reducing the quantum efficiency of the structure. The optical emission from these defects is discussed in this paper. The density of V-defects observed in monochromatic CL images is compared to the TD density in n type GaN sample.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Published: May 12, 2013
Pages: 143 - 146
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging
ISBN: 978-1-4822-0581-7