Narrow Fin Width Effect of HKMG Bulk FinFET Devices
Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Li Y., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Hsu S.-C., Huang W.-T., Yang C.-M., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chu S.-Y., National Chiao Tung University, TW
In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow [...]