Methodology for Calibrating Process and Device Simulators by Extracting Model Parameters from Electrical Data

Ho H-M, Zu Y., Loiko K.V., Lim D.H.Y.
Chartered Semiconductor Manufacturing Ltd., SG

Keywords: 0.25 um CMOS, 2D process, device simulation, reverse short charmel effect, short channel effect, TCAD calibration

This paper describes a physically based methodology for calibrating 2D semiconductor process and device simulators. The calibration begins with the determination of 1D and 2D doping profiles by means of extracting model parameters from electrical data without SIMS analysis, followed by tuning mobility model parameters to match the device I-V characteristics. The methodology is successfully demonstrated for NMOS and PMOS devices fabricated by 0.25pm salicide retrograde well CMOS process.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 209 - 212
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-96661-35-0-3