Measuring Resistive Characteristics of Silicon Nanowire by Applying Electrostatic Tensile Device and Broadband Test Signal

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Silicon nanowires have attracted significant attention by the electronics industry due to the need for ever-smaller electronics components and devices. It has been shown that nanostructures reveal mechanical and electrical properties that are significantly different compared to the bulk forms of the structures. Hence, precise experimental evaluation is needed when the structures are used as functional components in nanoelectromechanical systems. It has been shown that the resistivity of the nanowire increases when the size decrease as a result of surface scattering. This paper extends the studies and investigates how the resistive characteristics vary when the nanowire is stretched. An electrostatically actuated tensile device, developed in Shanghai Institute of Microsystem and Information Technology, is applied to study the resistive characteristics of a nanowire as the wire is stretched. The measurements are performed in the frequency domain by applying a test signal (voltage over the nanowire). The applied test signal is maximum-length binary sequence (PRBS) which is a periodic signal containing energy at several frequencies. The results reveal unreported characteristics of the applied nanowire. The wire resembles almost an ideal resistance within the bandwidth of the applied devices, and shows remarkably change in the resistance as the stretching force is varied

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Published: May 12, 2013
Pages: 23 - 26
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging
ISBN: 978-1-4822-0581-7