quantization – TechConnect Briefs

Measurements and Modeling of Mobility in Ultra-Thin SOI

Mastrapasqua M., Esseni D., Fiegna C., Agere Systems, US

We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]