Investigation of the Electronic Properties of the ZrO2 and HfO2 Thin Films by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy

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The advantages of the combined AFM/STM technique for investigating the dielectric properties of ultrathin MeOx layers with high spatial resolution is shown. Particularly, MO2/Si (M=Hf, Zr) interface evolution upon heat treatments is explored. It is observed that vacuum annealing in the range Ò =800-900 °Ñ of ZrO2 films grown on Si results in the degradation ZrO2,HfO2 with formation of a Zr, Hf silicide layer which starts to grow from ZrO2/Si, HfO2/Si interface.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 258 - 260
Industry sector: Advanced Materials & Manufacturing
Topicss: Advanced Materials for Engineering Applications, Coatings, Surfaces & Membranes
ISBN: 0-9767985-6-5