Investigation of the Electronic Properties of the ZrO2 and HfO2 Thin Films by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy

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The advantages of the combined AFM/STM technique for investigating the dielectric properties of ultrathin MeOx layers with high spatial resolution is shown. Particularly, MO2/Si (M=Hf, Zr) interface evolution upon heat treatments is explored. It is [...]