Investigation of the Electronic Properties of the ZrO2 and HfO2 Thin Films by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy
Antonov D.A., Filatov D.O., Maximov G.A., Zenkevich A.V., Lebedinskii Yu.Yu., Nizhni Novgorod State University, RU
The advantages of the combined AFM/STM technique for investigating the dielectric properties of ultrathin MeOx layers with high spatial resolution is shown. Particularly, MO2/Si (M=Hf, Zr) interface evolution upon heat treatments is explored. It is [...]