Miyake M., Sadachika N., Matsumoto K., Navarro D., Ezaki T., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S.
Hiroshima University, JP
Keywords: accumulation mode, capacitance, carrier transit delay, MOS-Varactor, RF applications
For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority carrier transit time, causing a formation delay of the accumulation/depletion condition. Good agreement with 2D device simulation result is verified up to 200GHz operation. The calculated quality factor is proved to deviate from linearity as a function of operation frequency due to the majority carrier transit delay.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 621 - 624
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 1-4200-6184-4