Miura-Mattausch M., Ueno H., Mattausch J.H., Miura-Mattausch M., Kumashiro S., Yamaguchi T., Yamashita K., Nakayama N.
Hiroshima University, JP
Keywords: charge-based modeling, MOSFET model, sub-100nm technology, surface potential
Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, the first self-consistent surface-potential model for circuit simulation based on the drift-di usion approximation and charge descriptions.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 678 - 681
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1