HiSIM: Accurate Charge Modeling Important for RF Era

, , , , , , , ,
,

Keywords: , , ,

Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge induced by the high lateral electric field is demonstrated to become a major contributing factor in the charge distribution of small-size MOSFETs, instead of the conventional intrinsic part. This changes the charge partitioning of the inversion charge, which changes the high-frequency response of small-size MOSFETs as well.

PDF of paper:


Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 258 - 261
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-1-7