Zhang Y., Zhang Y.
Xidian University, CN
Keywords: electron transport, Monte Carlo, silicon carbide, velocity overshoot
The physical model used in Monte Carlo simulation is developed considering the energy gap structures and the main scattering mechanisms in details. The static electron transport in the material 3C-SiC is analyzed by single particle Monte Carlo method at high field and high temperature. The results show the excellent high field and high temperature properties of the material. The scattering mechanisms at high temperature and high field are discussed by the analysis of the results. The calculations based on the ensemble Monte Carlo procedure reveal a velocity overshoot at different temperature.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 79 - 82
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 0-9666135-4-6