silicon carbide – TechConnect Briefs

The “first and euRopEAn siC eigTh Inches pilOt line” REACTION project as a Driver for key European SiC Technologies focused on Power Electronics Development

Bieniek T., Janczyk G., Sitnik A., Messina A., Instytut Technologii Elektronowej, PL

This paper presents the European project REACTION (first and euRopEAn siC eigTh Inches pilOt liNe) [1] [2] which was launched in 2018 to push throughout the new and European first 200mm (8”) SiC Pilot Line [...]

Self-assembly of Carbon Nanotubes on Large Structures and on Ceramics

Karwa M., Brukh R., Saridara C., Wang Y., Iqbal Z., Mitra S., New Jersey Inst. of Technology, US

Self-assembly techniques as related to carbon nanotubes (CNTs) is explored. The first is the self-assembly on the inside wall of stainless steel tubings using C2H4 as the carbon source and the iron nanostructures in the [...]

Silicon Carbide Micro/Nano Systems for Harsh Environment and Demanding Applications

Mehregany M., Fu X-A, Chen L., Case Western Reserve Univesity, US

Micro/nano systems enable the development of smart products and systems by augmenting the computational ability of microelectronics with the perception and control capabilities of sensors and actuators. Micro/nano systems are also known as micro- and [...]

Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination

Felsl H.P., Wachutka G., Münich University of Technology, DE

We have investigated the reverse behavior of 4H Silicon Carbide (SiC) Schottky diodes with a p-guardring junction termination. The breakdown behavior was analyzed with respect to the doping concentration of the epi-layer underneath the Schottky [...]

Finite-Element Modeling of 3C-SiC Membranes

DeAnna R.G., Mitchell J., Zorman C.A., Mehregany M., U.S. Army Research Laboratory, US

Finite-element modeling (FEM) of 3C-SiC thin-film membranes on Si substrates was used to determine the residual stress and center deflection with applied pressure. The anisotropic, three-dimensional model includes the entire 3C-SiC membrane and Si substrate [...]

High-Field and High-Temperature Transport in n-Type 3C-SiC

Zhang Y., Zhang Y., Xidian University, CN

The physical model used in Monte Carlo simulation is developed considering the energy gap structures and the main scattering mechanisms in details. The static electron transport in the material 3C-SiC is analyzed by single particle [...]