Using ab initio molecular dynamics simulation with simultaneous quantum chemical calculations we propose a new experimental method of contact-less control of the O/N ratio in SiON films on Si surfaces. The proposed method consists of direct measurements of reflected light coefficients for the parallel Rp and perpendicular Rs light polarizations in relation to the Si plane. We have shown that the spectral dependence of the anisotropic ratio P=Rs/Rp is closely connected to the O/N ratio. Independently performed experimental spectra measurements correspond well with experimental data. We demonstrate significant advantages over ellipsometry, XPS and other measurements both in precision as well as in technical implementation.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 83 - 86
Industry sector: Advanced Materials & Manufacturing
Topics: Informatics, Modeling & Simulation