Li Y., Chen W-H
National Chiao Tung University, TW
Keywords: 3D simulation, bulk FinFET, characteristics, fabrication, fin angle, optimization
Bulk-finFET (fin-shaped field effect transistor) has been viewed as a good candidate for nanoscale VLSI device fabrication and nanoelectronic circuit design [1-5]. The structure features an excellent device characteristics compared with conventional planer structures. In fabricating the bulk-finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90o) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk FinFETs are comprehensively investigated to draw the optimal strategy in novel VLSI device technology and nanoelectronic circuit design.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 20 - 23
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 0-9767985-8-1