Cui Z.
Rutherford Appleton Laboratory, UK
Keywords: computer simulation, electron beam, lithography, optical
Simulation of electron beam lithography and optical lithography has been combined to investigate the influence of a distorted photomask feature on final photoresist image. Unlike the previous optical lithography simulation which was based on ideal mask design, the combined simulation has shown that mask distortion due to electron proximity effect play an important role in worsening the optical proximity effect, which is particularly critical at subresolution optical lithography.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 87 - 90
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0