Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S.
Semiconductor Devices Research Laboratory, IN
Keywords: ATLAS, concave, DMG, intrinsic delay, RF, stability
The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower intrinsic delay pertained by L-DUMGAC architecture strengthens the idea of using it for switching applications, thereby giving a new opening for high frequency wireless communications. Thus, L-DUMGAC MOSFET design acts as an attractive solution for the ongoing integration process for LNA design and RF applications below the 65-nm technology node.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 586 - 589
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4200-8505-1