Advanced large scale colloidal lithography for sub-100 nm direct and indirect nanostructuring: application to silicon and metals

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Actually nano-sphere lithography is a great technique to fabricate structures at large scale, therefore using self-assembly as a bottom-up approach nano scale materials. In this study, combining Reactive Ion Etching(RIE) and polystyrene(PS) nano-sphere lithography we demonstrate using a simple, inexpensive and rapid procedure to realize sub 100 nm 2D structure in or on silicon substrates. In this work, we concentrated on self-organization using PS beads (diameters of 100nm) dropped on silicon substrate. We optimized the self-organization of the PS beads on the silicon substrate, wherein we observed that the deposited particles are very sensitive to different physico-chemical parameters. The optimization of these parameters allows us to produce large-scale colloidal 2D templates. Afterward, the effect of dry etching on the silicon has been studied. In summary, as prepared monolayers and bilayers of PS beads were used as etching masks to realize different sub-100 nm silicon structures such as nansphere, nanocone, nanoholes, nanotriangles, nanodot and finally nanostars. Such structures can be used as mold for nanomastering. This kind of study can also be extended to a variety of substrates of different materials paving the way to large-scale patterning related applications such as enhanced (bio)sensing using surface enhanced Raman scattering.

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Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Pages: 81 - 84
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Manufacturing
ISBN: 978-1-4987-4730-1