Zhou X., Chiah S.B., Lim K.Y.
Nanyang Technological University, SG
Keywords: compact model, deep-submicron MOSFETs, scalability, symmetry, technology development
This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), and symmetry, with a single-piece unified equation that approaches the ideal long-side-channel expression. Model calibration requires minimum measurement data with one-iteration parameter extraction, which can be extrapolated to predicting characteristics of extremely-scaled devices with severe threshold voltage roll-off, a regime in which most common models do not (or cannot) model.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 266 - 269
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-1-7