Lim D., Lim K.Y., Zhou X., Lim D., Lim K.Y.
Nanyang Technological University, SG
Keywords: compact modeling, process correlation, Saturation current, short channel effect, threshold voltage
This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, such as Vth roll-up and roll-off, drain induced barrier lowering (DIBL), transverse-field mobility degradation and series resistance. The unique feature of the compact model is its ability to correlate to process variations such as implantation dose and energy. The model is verified with measured Idsat data for various bias conditions and process splt-run.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 423 - 426
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6