velocity overshoot – TechConnect Briefs

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

Fossum J.G., Chouksey S., University of Florida, US

Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents [...]

Impact of Non-Stationary Transport Effects on Realistic 50nm MOS Technology

Munteanu D., Le Carval G., Guegan G., LETI, CEA/Grenoble, DMEL, FR

This paper highlights the impact of non-stationary transport on performances of deep submicron CMOS bulk technology. We present a quantitative analysis of technology influence on the needed level for carrier transport modeling (Drift-Diffusion versus Energy [...]

High-Field and High-Temperature Transport in n-Type 3C-SiC

Zhang Y., Zhang Y., Xidian University, CN

The physical model used in Monte Carlo simulation is developed considering the energy gap structures and the main scattering mechanisms in details. The static electron transport in the material 3C-SiC is analyzed by single particle [...]