Modeling study of capacitance and gate current in strained High–K Metal gate technology: impact of Si/SiO2/HK interfacial layer and band structure model
Garetto D., Rideau D., Dornel E., Clark W.F., Tavernier C., Leblebici Y., Schmid A., Jaouen H., IBM France, FR
The importance of developing predictive modeling tools has considerably increased with the diffusion of nanoscale technologies, in which strained layers and heterojunctions determine the materials modeling complexity. A self--consistent Poisson--Schroedinger solver based on a full-band [...]