submicron MOSFET – TechConnect Briefs

New Compact Model for Generation Drain Current Transients in Weak and Moderate Inversions of Submicron Floating-Body PD SOI MOSFETs

Ionescu A.M., Munteanu D., Swiss Federal Institute of Technology-EPFL, CH

In this paper, generation-type drain current transients, in advanced (down to 50nm gate-length) floating-body PD SOI MOSFETs are investigated by 2D numerical simulation in weak inversion operation. An original compact analytical model is derived for [...]

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]